NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff Current
Test Condition(s)
V
CB
=950 V, I
E
=0
V
CB
=90 V, I
E
=0, T
j
=150°C
Min Typ Mx Unit
-
-
-
80
140
7
50
30
90
40
100
40
50
30
15
40
-
-
-
100
80
80
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
-
-
-
-
100
-
120
300
120
-
100
-
-
0.2
0.5
1.1
-
-
400
200
4
12
60
400
MHz
-
dB
pF
pF
ps
V
nA
µA
nA
V
V
V
Emitter Cutoff Current
V
EB
=5 V, I
C
=0
Collector Emitter Breakdown
I
C
=10 mA, I
B
=0
Voltage
Collector Base Breakdown
I
C
=100 µA, I
E
=0
Voltage
Emitter Base Breakdown
I
E
=100 µA, I
C
=0
Voltage
I
C
=0.1 mA, V
CE
=10 V
I
C
=10 mA, V
CE
=10 V
I
C
=150 mA, V
CE
=10 V
h
FE
(1)
DC Current Gain
I
C
=500 mA, V
CE
=10 V
I
C
=1 A, V
CE
=10 V
I
C
=150 mA, V
CE
=10 V
T
amb
= -55°C
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
-
V
CE(SAT)
(1)
V
BE(SAT)
(1)
f
T
h
fe
NF
C
CBO
C
EBO
r
bb’
C
b’c
Collector-Emitter saturation
Voltage
Base-Emitter saturation
Voltage
Transition frequency
Small Signal Current Gain
Noise Figure
Collector-Base capacitance
Emitter-Base capacitance
Feedback Time Constant
I
C
=150 mA, I
B
=15 mA
I
C
=500 mA, I
B
=50 mA
I
C
=150 mA, I
B
=15 mA
I
C
=50 mA, V
CE
=10 V
f = 20 MHz
I
C
=1 mA, V
CE
=5 V
f = 1 kHz
I
C
=-100 µA, V
CE
=10 V
f = 1 kHz, R
g
= 1k
Ω
I
E
= 0 ,V
CB
=10 V
f = 1 MHz
I
C
= 0 ,V
EB
=0.5 V
f = 1 MHz
I
C
=10 mA, V
CE
=10 V
f = 4 MHz
(1) Pulse conditions : tp < 300
µs, δ
=2%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
