NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
f
T
Ratings
Transition frequency
Test Condition(s)
I
C
=50 mA
V
CE
=10 V
f = 20 MHz
I
C
=1 mA
V
CE
=5 V
f = 1 kHz
I
C
=-100 µA
V
CE
=10 V
f = 1 kHz
R
g
= 1kΩ
I
E
= 0
V
CB
=10 V
f = 1 MHz
I
C
= 0
V
EB
=0.5 V
f = 1 MHz
I
C
=10 mA
V
CE
=10 V
f = 4 MHz
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
Min
100
80
80
30
-
Typ
-
-
-
-
-
Max
-
-
400
Unit
MHz
h
fe
Small Signal Current Gain
-
200
4
dB
NF
Noise Figure
C
CBO
Collector-Base capacitance
-
2N3020
2N3019
2N3020
2N3019
-
2N3020
-
-
12
pF
C
EBO
Emitter-Base capacitance
-
60
pF
r
bb’
C
b’c
Feedback Time Constant
-
400
ps
(*) Pulse conditions : tp < 300
µs, δ
=2%
16/10/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
