PNP 2N2906 – 2N2906A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CBO
I
EBO
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current (*)
Collector Emitter
Breakdown Voltage
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
Test Condition(s)
V
CB
= -50 V T
a
= 25°C
I
E
= 0
T
a
= 150°C
V
EB
= -5 V, I
C
= 0
I
C
= -10 mA, I
B
= 0
I
C
= -10 µA, I
E
= 0
I
E
= -10 µA, I
C
= 0
I
C
= -0.1 mA, V
CE
= -10 V
I
C
= -1 mA, V
CE
= -10 V
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
Min
-
-
-
-
-
-60
-40
-60
-5
40
20
40
25
40
35
40
40
20
-
-
-
-
200
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-10
-20
-10
-20
-50
-
-
-
-
-
-
-
-
-
-
120
-
-
-0.4
-1.6
Unit
nA
µA
nA
V
V
V
h
FE
DC Current Gain
I
C
= -10 mA, V
CE
= -10 V
I
C
= -150 mA, V
CE
= -10 V
I
C
= -500 mA, V
CE
= -10 V
-
V
CE(SAT)
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
Transition
frequency
Delay time
Rise time
Collector
capacitance
I
C
= -150 mA, I
B
= -15 mA
I
C
= -500 mA, I
B
= -50 mA
I
C
= -150 mA, I
B
= -15 mA
I
C
= -500 mA, I
B
= -50 mA
V
-1.3
-2.6
-
10
40
8
30
MHz
ns
pF
pF
V
BE(SAT)
f
T
t
d
t
r
C
c
C
e
I
C
=-50 mA, V
CE
=-20 V
f= 100MHz (*)
I
C
=-150 mA ,I
B
=-15 mA
-V
CC
=-30 V
I
E
= I
e
= 0 ,V
CB
= -10 V
f = 1 MHz
I = I = 0 ,V
EB
= -2 V
Emitter capacitance
C c
f = 1 MHz
(*) Pulse conditions : tp < 300
µs, δ
=2%
01/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
