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2N2905_12 参数 Datasheet PDF下载

2N2905_12图片预览
型号: 2N2905_12
PDF下载: 下载PDF文件 查看货源
内容描述: 硅平面外延型晶体管 [SILICON PLANAR EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 80 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N2905_12的Datasheet PDF文件第1页浏览型号2N2905_12的Datasheet PDF文件第3页  
PNP 2N2905 – 2N2905A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
-
-
-
-
-
-60
-40
-60
-5
75
35
100
50
100
75
100
40
50
30
-
-
-
-
200
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-10
-20
-10
-20
-50
-
-
-
-
-
-
-
-
-
-
300
120
-
-
-0.4
-1.6
Unit
nA
µA
nA
V
V
V
I
CBO
I
CEX
V
CEO
V
CBO
V
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
t
d
t
r
C
CBO
C
EBO
2N2905A
V
CB
=-50 V
I
E
=0
2N2905
Collector Cutoff Current
2N2905A
V
CB
=-50 V, I
E
=0
T
j
=150°C
2N2905
2N2905A
V
CE
=-30 V
Collector Cutoff Current
V
BE
=0.5V
2N2905
2N2905A
Collector Emitter
I
C
=-10 mA
Breakdown Voltage
I
B
=0
2N2905
2N2905A
Collector Base
I
C
=-10 µA
Breakdown Voltage
I
E
=0
2N2905
2N2905A
Emitter Base Breakdown I
E
=-10 µA
Voltage
I
C
=0
2N2905
2N2905A
I
C
=-0.1 mA
V
CE
=-10 V
2N2905
2N2905A
I
C
=-1 mA
V
CE
=-10 V
2N2905
2N2905A
I
C
=-10 mA
DC Current Gain (*)
V
CE
=-10 V
2N2905
I
C
=-150 mA
2N2905A
V
CE
=-10 V
2N2905
2N2905A
I
C
=-500 mA
V
CE
=-10 V
2N2905
2N2905A
I
C
=-150 mA
I
B
=-15 mA
2N2905
Collector-Emitter
saturation Voltage (*)
2N2905A
I
C
=-500 mA
I
B
=-50 mA
2N2905
2N2905A
I
C
=-150 mA
I
B
=-15 mA
2N2905
Base-Emitter saturation
Voltage (*)
2N2905A
I
C
=-500 mA
I
B
=-50 mA
2N2905
I
C
=-50 mA
2N2905A
Transition frequency
V
CE
=-20 V
2N2905
f = 100MHz
Delay time
I
C
=-150 mA ,I
B
=-15 mA
-V
CC
=-30 V
Rise time
Collector-Base
I
E
= I
e
= 0 ,V
CB
=-10 V 2N2905A
f = 100kHz
capacitance
2N2905
I = I = 0 ,V
EB
=-2 V 2N2905A
Emitter-Base capacitance
C c
f = 100kHz
2N2905
-
V
-1.3
-2.6
-
10
40
8
30
MHz
ns
pF
pF
(*) Pulse conditions : tp < 300
µs, δ
=2%
16/10/2012
COMSET SEMICONDUCTORS
2/3