NPN 2N2484
Symbol
Ratings
Test Condition(s)
I
C
=1 µA, V
CE
=5 V
I
C
=10 µA, V
CE
=5 V
I
C
=100 µA, V
CE
=5 V
I
C
=500 µA, V
CE
=5 V
I
C
=1mA, V
CE
=5 V
I
C
=10 mA, V
CE
=5 V
I
C
=10 µA, V
CE
=5 V
Min Typ Mx Unit
30
100
175
200
250
-
20
-
0.5
200
290
375
430
450
430
-
-
500
-
-
-
800
-
V
h
FE
(*)
DC Current Gain
-
T
amb
= -55°
V
CE(SAT)
V
BE
Collector-Emitter saturation Voltage
Base-Emitter Voltage
I
C
=1 mA, I
B
=0.1 mA
I
C
=100 µA, V
CE
=5 V
0.2 0.35
0.57 0.7
Symbol
f
T
h
fe
C
CBO
C
EBO
Ratings
Transition frequency
Small signal current gain
Collector-Base Capacitance
Emitter-Base Capacitance
Test Condition(s)
I
C
=50 µA, V
CE
= 5 V
f= 5 MHz
I
C
=500 µA, V
CE
= 5 V
f= 30 MHz
I
C
=1 mA, V
CE
=5.0 V
f= 1 KHz
I
E
= 0 ,V
CB
=5 V
f = 1MHz
I
C
= 0 ,V
EB
=0.5 V
f = 1MHz
f = 100 Hz
I
C
= 0
f = 1 kHz
V
CE
=5.0 V
f = 10 kHz
R
g
= 10 k
Ω
f = 10 to
10000 Hz
Min Typ Mx Unit
15
60
150
-
-
-
-
-
-
20
78
400
3.5
3.5
4
1.8
0.6
1.8
-
MHz
-
900
6
6
10
3
2
3
-
pF
pF
NF
Noise figure
dB
(*) Pulse conditions : tp < 300
µs, δ
=1%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
