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2N2222 参数 Datasheet PDF下载

2N2222图片预览
型号: 2N2222
PDF下载: 下载PDF文件 查看货源
内容描述: 硅平面外延晶体管 [SILICON PLANAR EPITAXIAL TRANSISTORS]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 3 页 / 183 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N2222的Datasheet PDF文件第1页浏览型号2N2222的Datasheet PDF文件第3页  
NPN 2N2222 – 2N2222A
PNP 2N2907 – 2N2907A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CBO
I
EBO
I
CEX
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Test Condition(s)
V
CB
=60 V, I
E
=0V
V
CB
=50 V, I
E
=0V
V
CB
=60 V, I
E
=0V, T
j
=150°C
V
CB
=50 V, I
E
=0V, T
j
=150°C
V
BE
=3.0 V, I
C
=0
V
CE
=60 V, -V
BE
=3V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.4
1
1.6
1.2
1.3
2
2.6
-
nA
µA
nA
nA
V
V
V
Collector Emitter Breakdown
I
C
=10 mA, I
B
=0
Voltage
Collector Base Breakdown
I
C
=10 µA, I
E
=0
Voltage
Emitter Base Breakdown
I
E
=10 µA, I
C
=0
Voltage
I
C
=0.1 mA, V
CE
=10 V
I
C
=1 mA, V
CE
=10 V
I
C
=10 mA, V
CE
=10 V
h
FE
DC Current Gain
I
C
=10 mA, V
CE
=10 V
T
amb
= -55°
I
C
=150 mA, V
CE
=1 V (1)
I
C
=150 mA, V
CE
=10 V (1)
I
C
=500 mA, V
CE
=10 V (1)
I
C
=150 mA, I
B
=15 mA
I
C
=500 mA, I
B
=50 mA
I
C
=150 mA, I
B
=15 mA
I
C
=500 mA, I
B
=50 mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (1)
V
BE(SAT)
Base-Emitter saturation
Voltage (1)
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
40
30
2N2222
2N2222A
75
60
2N2222
6
2N2222A
5
2N2222
2N2222A
35
2N2222
2N2222A
50
2N2222
2N2222A
75
2N2222
2N2222A
35
-
2N2222
2N2222A
50
2N2222
2N2222A
100
2N2222
2N2222A
40
30
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
V
Symbol
f
T
h
fe
Ratings
Transition frequency
Small signal current gain
Test Condition(s)
I
C
=20 mA, V
CE
=20 V
f= 100MHz
I
C
=1 A, V
CE
=2.0 V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
3/3
MHz
-
2N2222A
250
300
2N2222
3
2N2222A
2.5
2N2222
COMSET SEMICONDUCTORS