NPN 2N1893
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
CER
V
EBO
Ratings
Collector Cutoff Current
Emitter Cutoff Current
Collector Base
Sustaining Voltage
Collector Emitter
Sustaining Voltage (*)
Collector Base
Breakdown Voltage (*)
Emitter Base
Breakdown Voltage
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
Transition Frequency
Collector Capacitance
Base Capacitance
Test Condition(s)
V
CB
= 90 V
I
E
= 0
V
EB
= 5 V, I
B
= 0
I
C
= 100 mA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
C
= 10 mA, R
BE
= 10
Ω
I
E
= 100 µA, I
C
= 0
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA
T
amb
= 25°C
V
CE
= 10 V
T
amb
= -55°C
I
C
= 150 mA, V
CE
= 10 V
I
C
= 50 mA, I
B
= 5 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 50 mA, V
CE
= 10 V
f= 20 MHz
I
E
= i
e
= 0 ,V
CB
= 10 V
f = 1MHz
I
C
= i
c
= 0 ,V
EB
= 0.5 V
f = 1MHz
T
amb
= 25°C
T
amb
= 150°C
Min Typ Max
-
-
-
120
80
100
7
20
20
35
40
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
15
10
-
-
-
-
-
-
120
0.9
0.5
1.2
1.3
-
15
85
Unit
nA
µA
nA
V
V
V
V
h
FE
-
V
CE(SAT)
V
BE(SAT)
f
T
C
C
C
e
V
V
MHz
pF
pF
(*) Pulse conditions : tp < 300
µs, δ
=2%.
11/09/2012
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
