NPN 2N1613 – 2N1711
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EB0
V
CBO
V
CER
(*)
Ratings
Collector Cutoff Current
Test Condition(s)
Min
-
-
-
-
75
50
7
-
-
-
20
35
40
20
20
20
35
75
100
40
35
30
70
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
35
-
-
-
-
-
-
-
130
-
75
65
-
-
2.2
4.4
3.6x10
-4
7.3x10
12.5
23.8
-4
Mx
10
10
10
5
-
-
-
1.5
1.3
-
-
-
120
-
-
-
-
-
300
-
-
150
Unit
nA
µA
nA
V
V
V
V
V
V
CE
=60 V, I
E
=0
V
CE
=60 V, I
E
=0, T
amb
=
150°C
2N1613
V
EB
=5 V
Emitter Cutoff Current
2N1711
V
EB
=5 V
I
C
=0.1 mA
Collector Base Breakdown Voltage
I
C
=10 mA , R
BE
=10
Ω
I
E
=100 µA , I
C
=0
I
C
=150 mA , I
B
=15 mA
I
C
=150 mA , I
B
=15 mA
I
C
=0.01 mA , V
CE
=10 V
I
C
=0.1 mA , V
CE
=10 V
I
C
=10 mA , V
CE
=10 V
I
C
=150 mA , V
CE
=10 V
I
C
=500 mA , V
CE
=10 V
I
C
=10 mA , V
CE
=10 V,
T
amb
=55°C
I
C
=0.01 mA , V
CE
=10 V
I
C
=0.1 mA , V
CE
=10 V
I
C
=10 mA , V
CE
=10 V
I
C
=150 mA , V
CE
=10 V
I
C
=500 mA , V
CE
=10 V
I
C
=10 mA , V
CE
=10 V,
T
amb
=55°C
I
C
=1 mA , V
CE
=10 V,
f = 1 kHz
I
C
=1 mA , V
CE
=10 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
I
C
=1 mA , V
CE
=5 V,
f = 1 kHz
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown Voltage
V
EBO
V
CE(SAT)
(*) Collector-Emitter saturation Voltage
V
BE(SAT)
(*) Base-Emitter saturation Voltage
2N1613
h
FE
(*)
DC Current Gain
-
2N1711
2N1613
h
fe
Small Signal Current Gain
2N1711
2N1613
-
300
-
kΩ
-
-
-
-
-
µS
-
h
je
Input Impedance
2N1711
2N1613
h
re
Reverse VoltageRatio
2N1711
2N1613
h
oe
Output Admitance
2N1711
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
