2N1671 – 2N1671A – 2N1671B
PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
They are designed for medium-power switching, oscillator and pulse timing circuits.
Package outline is similar to TO-5 except
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Highly Stable Negative Resistance and Firing Voltage
Low Firing Current
High Pulse Curent Capabilities
Simplified Circuit Design
ABSOLUTE MAXIMUM RATINGS
Symbol
V
B1E
V
B2E
V
B1B2
I
FRMS
I
EM
P
TOT
T
J
T
STG
Ratings
Base 1 – Emitter Reverse Voltage
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
Value
30
Unit
V
Base 2 – Emitter Reverse Voltage
30
V
Interbase Voltage
35
V
RMS Emitter Current
50
mA
Emitter Peak Current
2
A
Total Power Dissipation
450
mW
Maximum Junction
150
°C
-55 to +150
Storage Temperature Range
This data guaranteed in addition to JEDEC registered data
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
