BDY26 – 183T2
BDY27 – 184T2
BDY28 – 185T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDY26, 183T2
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
BDY28C, 185T2C
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Min
180
200
250
250
220
300
400
500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
30
75
10
-
-
Typ MAx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
90
20
45
82
-
0.3
1.5
0.6
V
1.0
mA
-
-
-
-
-
-
-
-
1.0
V
CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=50 mA
I
B
=0
V
V
(BR)CBO
Collector-Base
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
I
C
=3 mA
V
CE
=180 V
V
CE
=200 V
V
CE
=250 V
V
EB
=10 V
V
CE
=250 V
V
BE
=0 V
V
CE
=300 V
V
BE
=0 V
V
CE
=400 V
V
BE
=0 V
I
C
=2.0 A
I
B
=0.25 A
V
I
CEO
mA
I
EBO
1.0
mA
I
CES
Collector-Emitter Cutoff
Current
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
V
BE(SAT)
h
FE
DC Current Gain
f
T
t
d
+ t
r
t
s
+ t
f
Transition Frequency
Turn-on time
Turn-off time
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
I
C
=2.0 A
BDY27, 184T2
I
B
=0.25 A
BDY28, 185T2
A
V
CE
=4 V
B
I
C
=1 A
C
A
V
CE
=4 V
B
I
C
=2 A
C
V
CE
= 15 V, I
C
= 0.5 A, f= 10 MHz
I
C
= 5 A, I
B
= 1 A
I
C
= 5 A, I
B1
= 1 A, I
B2
= -0.5 A
1.2
-
-
-
45
90
180
-
0.5
2.0
V
-
MHz
µs
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2%
2|3
24/09/2012
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
