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RB520S-30 参数 Datasheet PDF下载

RB520S-30图片预览
型号: RB520S-30
PDF下载: 下载PDF文件 查看货源
内容描述: SMD肖特基势垒二极管 [SMD Schottky Barrier Diode]
分类和应用: 二极管光电二极管
文件页数/大小: 4 页 / 172 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号RB520S-30的Datasheet PDF文件第2页浏览型号RB520S-30的Datasheet PDF文件第3页浏览型号RB520S-30的Datasheet PDF文件第4页  
SMD Schottky Barrier Diode
SMD Diodes Specialist
RB520S-30
(RoHS Device)
Io = 200 mA
V
R
= 30 Volts
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.014(0.35)
0.010(0.25)
0.033(0.85)
0.030(0.75)
SOD-523
0.051(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
Mechanical data
Case: SOD523 standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & B
Mounting position: Any
Weight: 0.0012 gram(approx.).
0.031(0.77)
0.020(0.51)
0.003(0.07)
0.001(0.01)
0.006(0.15)
0.003(0.08)
0.008(0.20)
REF
Dimensions in inches and (millimeter)
Circuit Diagram
Maximum Rating
(at T
A
=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
I
FSM
T
STG
T
j
-40
35
30
200
V
V
mA
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.6
1
V
uA
REV:A
QW-BB023
Page 1
Comchip Technology CO., LTD.