SMD Schottky Barrier Rectifiers
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
-High current capability, low VF.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
Comchip
SMD Diode Specialist
MBR2030CT-G Thru. MBR20150CT-G
TO-220AB
0.108
(2.75)
0.413(10.50)
0.347( 9.50)
0.153(3.90)
0.146(3.70)
0.187(4.70)
0.148(3.80)
0.055(1.40)
0.047(1.20)
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
Mechanical Data
-Case: TO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
0.051(1.30)
MAX
0.157
(4.0)
0.583(14.80)
0.531(13.50)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.126
(3.20)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
IF=10A@ T
J
= 25°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
MBR
MBR
MBR
MBR
MBR
MBR
MBR
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G
30
21
30
40
28
40
50
35
50
60
42
60
20.0
80
56
80
100
70
100
150
105
150
Unit
V
V
V
A
150
-
0.57
0.84
0.72
0.10
15.0
400
1.50
-55 to +150
-55 to +175
0.80
0.70
0.95
0.85
0.10
10.0
320
3.50
0.85
0.75
0.95
0.85
0.10
7.50
0.95
0.85
1.05
0.95
0.10
5.00
A
Peak Forward Voltage
(Note 1)
IF=10A@ T
J
=125°C
IF=20A@ T
J
= 25°C
IF=20A@ T
J
=125°C
V
F
V
Maximum DC Reverse Current
@ T
J
= 25°C
at Rate DC Blocking Voltage
@ T
J
= 125°C
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
I
R
C
J
R
θJC
T
J
T
STG
mA
pF
°C/W
°C
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
QW-BB046
REV:B
Page 1
Comchip Technology CO., LTD.
COMCHIP [ COMCHIP TECHNOLOGY ]
