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GBPC3508W-G 参数 Datasheet PDF下载

GBPC3508W-G图片预览
型号: GBPC3508W-G
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化桥式整流器 [Glass Passivated Bridge Rectifiers]
分类和应用:
文件页数/大小: 3 页 / 87 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号GBPC3508W-G的Datasheet PDF文件第2页浏览型号GBPC3508W-G的Datasheet PDF文件第3页  
Glass Passivated Bridge Rectifiers
GBPC15005W-G Thru. GBPC5010W-G Series
Reverse Voltage: 50 to 1000V
Forward Current: 15/25/35/50A
RoHS Device
Features
-Surge overload-300~450 Amperes peak
-Low forward voltage drop
-Electrically isolated base -2000 Volts
-Materials used carries U/L recognition
1.20(30.5)min
0.042(1.07)
0.038(0.97)
Hole for
No.8 screw
193"(4.9)diam
GBPC-W
METAL HEAT SINK
0.335(8.50)
0.295(7.50)
Mechanical Data
-Polarit:As marked on Body
-Mounting position:Any
-Weight: 16.57grams
1.133(28.80)
1.114(28.30)
0.732(18.60)
0.693(17.60)
1.133(28.80)
1.114(28.30)
0.469(11.90)
0.429(10.90)
0.732(18.60)
0.693(17.60)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
GBPC_W-G
GBPC_W-G
GBPC_W-G
GBPC_W-G
GBPC_W-G
GBPC_W-G
GBPC_W-G
O
15005
1501
2501
3501
5001
100
70
100
1502
2502
3502
5002
200
140
200
1504
2504
3504
5004
400
280
400
1506
2506
3506
5006
600
420
600
1508
2508
3508
5008
800
560
800
1510
2510
3510
5010
1000
700
1000
V
V
V
Parameter
Symbol
25005
35005
50005
Unit
Maximum Reverse Peak Repetitive
Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V
RRM
V
RRM
V
DC
50
35
50
Parameter
Maximum Average Forward
Rectified Output Current @Tc=55°C
Symbol
I
(AV)
I
FSM
GBPC15W
15
300
GBPC25W
25
350
GBPC35W
35
400
GBPC50W
50
450
Unit
A
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
Maximum Forward Voltage
Drop Per Element at
7.5/12.5/17.5/25.0A Peak
Maximum Reverse Current at rate
DC Blocking Voltage Per Element
@ T
J
=25°C
Operating Temperature Range
Storage Temperature Range
V
F
1.1
V
I
R
T
J
T
STG
10.0
-55 to +150
-55 to +150
μA
°C
°C
REV:A
QW-BBR65
Page 1
Comchip Technology CO., LTD.