Surface Mount Switching Diode
Characteristic
Symbol
Min
COMCHIP
www.comchip.com.tw
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100
µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50
Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500
Ω)
1.FR–5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
IR
—
—
—
V(BR)
VF
—
—
—
—
CD
VFR
trr
QS
—
—
—
—
715
855
1000
1250
2.0
1.75
6.0
45
pF
Vdc
ns
pC
75
1.0
50
30
—
Vdc
mV
µAdc
MDS0212004A
Page 2
COMCHIP [ COMCHIP TECHNOLOGY ]
