Schottky Barrier Rectifiers
1N5817-G Thru. 1N5819-G
Reverse Voltage: 20 to 40 V
Forward Current: 1.0 A
RoHS Device
Features
-Metal-Semiconductor junction with guard ring.
-Epitaxial construction.
-Low forward voltage drop.
-High current capability.
-For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
0.205(5.20)
0.165(4.20)
0.107(2.70)
DIA.
0.080(2.00)
1.000(25.40) Min.
1.000(25.40) Min.
0.034(0.90)
DIA.
0.028(0.70)
DO-41
Mechanical data
-Case: JEDEC DO-41 molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode
-Mounting position: Any
-Weight: 0.012 once, 0.34 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
A
=75°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
V
F
@T
J
=25°C
@T
J
=100°C
I
R
1N5817-G
20
14
20
1N5818-G
30
21
30
1.0
25
1N5819-G
40
28
40
Unit
V
V
V
A
A
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum forward voltage at 1.0A DC
Maximum forward voltage at 3.0A DC
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
0.450
0.750
0.550
0.875
1.0
0.600
0.900
V
V
mA
10
C
J
R
θJA
T
J
T
STG
110
80
-55 to +150
-55 to +150
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-BG016
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Comchip Technology CO., LTD.
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