Glass Silicon Zener Diode
Comchip
SMD Diode Specialist
1N5221B-G Thru. 1N5267B-G
Voltage: 2.4 to 75 Volts
Power: 0.5 Watts
RoHS Device
Features
-Planar Die Construction
-500mW Power Dissipation
-Ideally Suited for Automated Assembly Processes
1.02(26.00) Min.
DO-35
Mechanical data
-Case: Molded plastic, DO-35
-Terminals : Solderable per MIL-STD-750,Method
Method 2026
-Polarity: Indicated by cathode band
0.020(0.52)Typ.
0.079(2.00)Max.
0.165(4.20)Max.
1.02(26.00) Min.
-Marking: Type number
-Weight: 0.13gram
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Parameter
Power dissipation at Tamb=25°C
Junction temperature
Storage temperature range
Symbol
PToT
TJ
TSTG
Value
500
175
-65 ~ +175
Unit
mW
°C
°C
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Parameter
Thermal resistance (junction to ambient air)
Forward voltage at IF = 200mA
Symbol
RθJA
VF
Min
Max
0.3*
1.1
Unit
K/mW
V
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
REV: B
QW-BZ001
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