Fast Switching Diode
COMCHIP
www.comchiptech.com
1N4148 / 1N4448
High Speed
DO-35
Features
- Fast Switching Speed
- General Purpose Rectification
- Silicon Epitaxial Planar Construction
0.079 (2.0)
Max.
1.0 (25.4)
Min.
Mechanical Data
- Case: DO-35
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 0.13 grams (approx.)
0.024 (0.60)
Max.
0.157 (4.0)
Max.
1.0 (25.4)
Min.
Dimensions in inches and (millimeters)
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
300
150
1.0
2.0
500
1.68
300
-65 to +175
1N4148
100
75
53
500
1N4448
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
1N4148
1N4448
1N4448
V
FM
Min
¾
0.62
¾
¾
¾
¾
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
j
= 150°C
V
R
= 20V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100W
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
I
RM
C
j
t
rr
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
MDS0312005A
Page 1
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