Low Profile SMD Super Fast Recovery Rectifiers
SMD Diodes Specialist
CSFMT101-HF Thru. CSFMT108-HF
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Tiny plastic SMD package.
-High current capability.
-Super fast reovery time for switching mode application.
-High surge current capability.
-Glass passivated chip junction.
-Lead-free parts meet RoHS requirment.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant.
-Case: Molded plastic, SOD-123H/MINI SMA
-Terminals: Solderable per MIL-STD-750, Method 2026.
-Polarity: Indicated by cathode band.
-Mounting Position: any
-Weight: 0.011 grams approx.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings
(at T
A
=25°C unless otherwise noted)
Parameter
Max. repetitive peak reverse voltage
Max. Continuous rever voltage
Max. RMS voltage
Max. averaged forward current
Max. Forward voltage
@ I
F
=1.0A
Reverse recovery time (Note 1)
Max. Forward surge current
8.3ms singe half sine-wave superimposed
on rated load (JEDEC method)
Symbol
V
RRM
V
R
V
RMS
I
O
V
F
T
RR
CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT
101-HF 102-HF 103-HF 104-HF 105-HF 106-HF 107-HF 108-HF
Unit
V
V
V
A
50
50
35
100
100
70
150
150
105
200
200
140
1.0
300
300
210
400
400
280
500
500
350
600
600
420
0.95
35
1.25
1.70
V
ns
I
FSM
25
5.0
A
V
R
=V
RRM
T
J
=25°C
Max. Reverse current
V
R
=V
RRM
T
J
=100°C
Typ. Thermal resistance
Junction to ambient air
I
R
100
R
θJA
C
J
T
J
T
STG
42
10
-55 to +150
-65 to +175
μA
°C/W
pF
°C
°C
Typ. Junction capacitance
f=1MHz and applied 4V DC reverse voltage
Operating junction temperature
Storage temperature
Note 1. Reverse recovery time test condition,I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A
REV: A
QW-JS002
Page 2
Comchip Technology CO., LTD.
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