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CLT250 参数 Datasheet PDF下载

CLT250图片预览
型号: CLT250
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅光电晶体管 [NPN Silicon Phototransistor]
分类和应用: 晶体光电晶体管光电晶体管
文件页数/大小: 1 页 / 106 K
品牌: CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
   
CLT250
NPN Silicon Phototransistor
PRELIMINARY
®
Clairex
June, 2006
Technologies, Inc
.
0.007 (0.18)
0.003 (0.08)
EMITTER
0.090 (2.29)
0.080 (2.03)
0.024 (0.61)
0.016 (0.41)
0.062 (1.57)
0.057 (1.45)
0.093 (2.36)
0.083 (2.11)
0.125 (3.18)
0.102 (2.59)
COLLECTOR
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
±18° acceptance angle
Miniature hermetic package
High sensitivity
Spectrally matched to the CLE250
RoHS compliant
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ....................................................................... -65°C to +150°C
operating temperature .................................................................... -65°C to +125°C
lead soldering temperature
(1)
.......................................................................... 260°C
collector-emitter voltage...................................................................................... 30V
emitter-collector voltage........................................................................................ 5V
(2)
continuous power dissipation ..................................................................... 125mW
1.
2.
5 seconds maximum.
Derate linearly 1.0mW/°C from 25°C free air temperature to T
A
= +125°C.
description
The CLT250 is an NPN silicon
phototransistor mounted in a
hermetically sealed package with a
glass lens. This package is
ideally suited for mounting into
double-sided PC boards and is
capable of reliable operation over a
wide temperature range.
notes:
electrical characteristics
(at T
A
= 25°C unless otherwise noted)
symbol
I
L
parameter
min
typ
max
units
test conditions
Light current
(3)
7.0
-
-
mA
V
CE
= 5V, H = 20mW/cm
2
I
CEO
Collector dark current
-
-
100
nA
V
CE
= 10V, H = 0
V
(BR)CEO
Collector-emitter breakdown voltage
30
-
-
V
V
CE
= 10V, I
C
= 100µA
V
(BR)ECO
Emitter-Collector breakdown voltage
5.0
-
-
V
V
CE
= 10V, I
E
= 100µA
V
CE(SAT)
Collector-emitter saturation voltage
-
-
0.4
V
I
C
= 1mA, H = 20mW/cm
2
Total angle at half sensitivity points
-
36
-
deg.
Θ
HP
t
r,
t
f
Radiation rise and fall time
-
15
-
µs
V
CE
= 5V, I
C
= 1mA, R
L
= 1KΩ
notes:
3. The radiation source is a tungsten lamp operating at a color temperature of 2854°K.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 4/22/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com