CLI710
IRED – Phototransistor
Reflective Object Sensor
0.500(12.7) min.
0.175 (4.46)
0.165 (4.21)
1.
Cathode
Vcc
2. Anode
0.100 Dia
3
0.187 (4.75)
0.179 (4.55)
2
1
0.021 (0.53) Dia
0.017 (0.43)
4
Places
3
0.030 (0.76) max.
0.160 (4.08) Emitting Window
0.150 (3.81) Diameter
0.230 (5.84)
0.209 (5.31)
2
2
1
®
Clairex
Technologies, Inc.
March
,
2002
Internally
3.
Emitter
Output
4.
Collector
Ground
4
connected
to header
0.048 (1.22)
0.028 (0.71)
0.046 (1.17)
0.036 (0.91)
45°
4
3
0.020 (0.50) Diameter
Detection Area
1
4
3
ALL DIMENSIONS
ARE IN INCHES
(MILLIMETERS)
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ........................................................................ -40°C to +125°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature
(1)
........................................................................... 260°C
IRED
continuous forward DC current
(2)
......................................................................35mA
description
reverse DC voltage................................................................................................5V
The CLI710 consists of an 880nm
continuous power dissipation
(3)
......................................................................100mW
AlGaAs IRED and a phototransistor
mounted on a custom TO-72 header. PHOTOTRANSISTOR
collector-emitter voltage ......................................................................................30V
The IRED emits a broad radiation
emitter-collector voltage ........................................................................................5V
pattern through the formed clear
continuous power dissipation
(4)
......................................................................100mW
epoxy lens. Radiation reflected
note:
from the target is received by a
1. 0.06” (1.5mm) from the header for 5 seconds maximum
0.020” diameter fiber optic light pipe
2. Derate linearly 0.37mA/°C from 25°C free air temperature to T
A
= +100°C.
attached to the active area of the
3. Derate linearly 1.07mW/°C from 25°C free air temperature to T
A
= +100°C.
phototransistor. For assistance or
4. Derate linearly 1.07mW/°C from 25°C free air temperature to T
A
= +100°C.
other configurations, call Clairex.
features
•
0.020” dia. light pipe aperture
•
T0-72 package
•
analog output
electrical characteristics
(T
A
= 25°C and V
CC
= 5.0V unless otherwise noted)
symbol parameter
Input IRED
V
F
I
R
V
(BR)CEO
V
(BR)ECO
I
D
Forward voltage
Reverse current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark current
min
-
-
30
5.0
-
typ
1.50
-
-
-
-
max
1.65
10
-
-
20
units
V
µA
V
V
nA
test conditions
I
F
= 20mA
V
R
= 5V
I
C
= 1mA, I
F
= 0, E
e
= 0
I
E
= 100µA, I
F
= 0, E
e
= 0
V
CE
= 10V, I
F
= 0, E
e
= 0
V
CE
= 5V, I
F
= 20mA, d = 0.030”
V
CE
= 5V, I
F
= 20mA
Output Phototransistor
Coupled
Light current
(4)
150
250
-
µA
(5)
Crosstalk ratio
3
10
-
I
CX (ratio)
notes:
4. Measured using a Kodak 90% diffuse reflectance neutral white test card.
5. No reflective surface. I
CX(ratio)
= I
L(µA)
/I
CX(µA)
.
I
L
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
