CLE400F
Four leaded Multiple Emitter Chip
Surface Mount Package
0.056 (1.42)
025 (0.63)
0.025 (0.63)
0.012 (0.30)
2
1
0.110 (2.81)
0.110 (2.81)
PIN 1 MARK
®
Clairex
Technologies, Inc
.
March, 2002
0.006 (0.15)
0.028 (0.71)
2
3
4
0.006 (0.15)
0.063 (1.60)
0.275 ± 0.010
(6.99 ± 0.25)
0.063 (1.60)
0.075 (1.89)
3
4
0.038 (0.97)
All dimensions are in inches (millimeters).
Unless otherwise indicated, tolerance is ± 0.005 (0.12)
0.066 (0.68)
0.069 (1.75)
0.056 (1.42)
0.032 (0.81)
1
features
• ±70°
emission angle
•
wide variety of chip combinations
•
wide variety of lenses and apertures
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
description
The CLE400F can contain three 850
nm IRED chips which feature double/
double heterojunction (DDH)
notes:
construction for increased quantum
1. For 5 seconds maximum
efficiency and reliability. This device
2. Derate linearly 0.213mA/°C from 25°C free air temperature to T
A
= +100°C.
is one example of a very broad line of
3. Derate linearly 0.85mW/°C from 25°C free air temperature to T
A
= +100°C.
devices made possible by four leaded
package configuration. One to three
chips can be attached. Multiple chip
devices can be series or parallel
connected. Wavelengths can range
from ultra-violet (390nm) through the
visible spectrum into the near infrared
(940nm). Also different lenses,
apertures and lead configurations
are available. The standard lensing is
clear epoxy.
storage temperature........................................................................-40°C to +100°C
operating temperature.....................................................................-40°C to +100°C
lead soldering temperature
(1)
...........................................................................260°C
(2)
continuous forward current ..............................................................20mA/per chip
peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 1A
reverse voltage..................................................................................................... 5V
continuous power dissipation
(3)
.......................................................................80mW
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
P
O
V
F
I
R
λ
p
BW
θ
HP
parameter
Total power output
(4)
Forward voltage
Reverse current
Peak wavelength emission
Spectral bandwidth at half power points
Emission angle at half power points
min
9.0
-
-
-
-
-
typ
13.0
-
-
850
60
140
max
-
1.4
10
-
-
-
units
mW
V
µA
nm
nm
deg.
test conditions
I
F
= 60mA
(total cathode current)
I
F
= 20mA per chip
V
R
= 5V
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
note:
4. Power output is measured in an integrating sphere.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 4/17/07
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
