CLD171
Large Active Area
Silicon Planar photodiode
®
This product is tested to satisfy the
conditions of both the CLD171 and
the CLD171R.
Clairex
September, 2002
Technologies, Inc
.
0.253 (6.43)
0.243 (6.17)
0.080 (2.03)
0.070 (1.78)
1.00 (25.4) min.
ANODE
0.288 (7.32)
0.278 (7.06)
CATHODE
0.200 (5.08)
0.065 (1.65) max
Anode lead is identified by red dot on side of substrate.
Case 13
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
•
•
•
•
130° acceptance angle
860nm peak response
125°C operating temperature
usable for visible through near-IR
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature........................................................................-40°C to +125°C
operating temperature.....................................................................-40°C to +125°C
lead soldering temperature
(1)
.......................................................................... 260°C
reverse voltage ...................................................................................................30V
continuous power dissipation
(2)
....................................................................200mW
description
The CLD171 and CLD171R, are
0.122" x 0.122" active area silicon
photodiodes featuring high linearity
and low dark current. They are
epoxy encapsulated for lower cost
applications. Wide acceptance
angle permits use in IR air
communications, ambient light
detection, safety and monitoring,
security systems, etc.
notes:
1.
2.
0.06” (1.5mm) from the header for 5 seconds maximum.
Derate linearly 1.6mW/°C free air temperature to T
A
= +125°C.
If higher operating temperature is required, see the CLD160.
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
I
SC
I
D
V
O
V
BR
C
J
t
r
, t
f
Θ
HP
note
:
3.
4.
parameter
Short-circuit current
(3)
Dark current
Open circuit voltage
(3)
min
-
-
-
-
25
-
-
-
typ
70
-
-
0.35
-
-
-
130
max
-
10
5.0
-
-
200
12
-
units
µA
nA
nA
V
V
pF
µs
deg.
test conditions
V
BIAs
=0V, E
e
= 5mW/cm
V
F
= 100mV, E
e
= 0
V
R
= 15V, E
e
= 0
E
e
= 5mW/cm
2
I
R
= 100µA
V
BIAS
= 0V, f = 1MHz
R
L
= 1kΩ
2
Reverse breakdown
Junction capacitance
Output rise and fall time
(4)
Total angle at half sensitivity points
Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and E
e
= 20mW/cm
2
.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
