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CS1500-FSZ 参数 Datasheet PDF下载

CS1500-FSZ图片预览
型号: CS1500-FSZ
PDF下载: 下载PDF文件 查看货源
内容描述: 数字功率因数校正IC [Digital Power Factor Correction IC]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器功率因数校正光电二极管
文件页数/大小: 22 页 / 828 K
品牌: CIRRUS [ CIRRUS LOGIC ]
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May ?$shortyear>  
CONFIDENTIAL  
CS1500  
1. CHARACTERISTICS AND SPECIFICATIONS  
1.1 Absolute Maximum Ratings  
Pin  
Symbol  
Parameter  
Value  
VZ  
Unit  
V
7
VDD  
-
IC Supply Voltage  
1,2,3,4,8  
Analog Input Maximum Voltage  
Analog Input Maximum Current  
Gate Drive Output Voltage  
-0.5 to VZ  
50  
V
3,4  
6
-
mA  
V
VGD  
IGD  
PD  
-0.3 to VZ  
-1.0 / +0.5  
600  
6
Gate Drive Output Current  
A
-
Total Power Dissipation @ TA=50° C  
mW  
-
θJA  
TA  
Junction-to-Ambient Thermal Impedance  
107  
ºC / W  
ºC  
Operating Ambient Temperature Range1  
Junction Temperature Operating Range  
Storage Temperature Range  
-40 to +125  
-
-
TJ  
-40 to +125  
-65 to +150  
ºC  
ºC  
TStg  
1.2 Electrical Characteristics  
(TA = 25º C, VDD = 13V, -40º < TJ < +125º C, CL=1nF between pin GD and GND, all voltages are measured with respect to  
GND; all current are positive when flowing into the IC; unless otherwise specified)  
Parameter  
VDD Supply Voltage  
Condition  
Symbol  
Min  
Typ  
Max  
Unit  
Turn-on Threshold Voltage  
Turn-off Threshold Voltage (UVLO)  
UVLO Hysteresis  
VDD Increasing  
VDD Decreasing  
VDD(on)  
VDD(off)  
VHys  
8.4  
7.1  
-
8.8  
7.4  
9.3  
7.9  
-
V
V
V
V
1.3  
Zener Voltage  
IDD = 20 mA  
VZ  
17.0  
17.9  
18.5  
VDD Supply Current  
Start-up Supply Current  
Standby Supply Current  
Operating Supply Current  
PFC Gate Drive  
VDD = VDD(on)  
STBY < 0.8 V  
IST  
ISB  
IDD  
-
-
-
68  
80  
80  
95  
μA  
μA  
CL=1nF, fsw=70kHz  
1.7  
1.9  
mA  
Maximum Operating Frequency6  
Minimum Operating Frequency6  
VDD = 13V  
VDD = 13V  
fSW(max)  
fSW(min)  
62  
20  
66  
22  
70  
23  
kHz  
kHz  
Maximum Duty Cycle6  
Output Source Resistance  
Output Sink Resistance  
Rising Time  
VDD = 13V  
Dmax  
ROH  
ROL  
tr  
64  
66  
9
68  
-
%
Ω
I
GD = 100mA,VDD = 13V  
-
IGD = -200mA,VDD = 13V  
CL=1nF,VDD = 13V  
-
6
-
Ω
-
32  
15  
0.9  
11.8  
45  
25  
1.3  
-
ns  
ns  
V
Falling Time  
CL=1nF,VDD = 13V  
tf  
-
-
Output Voltage Low State  
Output Voltage High State  
IGD = -200mA,VDD = 13V  
IGD = 100mA,VDD = 13V  
Vol  
Voh  
11.3  
V
DS849A5  
3