CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BR805 THRU BR810
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：8.0A
FEATURES
·Surge overload ratings-125 Amperes
·Low forward voltage drop
KBPC-8/10
.296(7.5)
.255(6.5)
.052(1.3) DIA.
.048(1.2) TYP.
.750
(19.1) MIN.
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
HOLE FOR
NO. 6 SCREW
MECHANICAL DATA
·Case:Metal or plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting: Thru hole for 6# screw
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
Dimensions in inches and (millimeters)
·Weight: 6.9 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
BR805 BR81 BR82 BR84 BR86 BR88 BR810 units
SYMBOL
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward rectified Output
Current at TC=75°C
Io
8.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
VF
IR
250
A
V
Maximum Forward Voltage Drop per element at
4.0A DC
1.1
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25°C
µA
500
166
200
@ TA=100°C
per element
I2t
CJ
A2Sec
pF
I2t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with
0.5×0.5”(13×13mm) copper pads.
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