CS5151
Electrical Characteristics:
0°C < T
A
< +70°C; 0°C < T
J
< +85°C; 8V < V
CC1
< 14V; 5V < V
CC2
< 14V; DAC Code: V
ID2
= V
ID1
=
V
ID0
= 1; V
ID3
= 0; CV
GATE
= 1nF; C
OFF
= 330pF; C
SS
= 0.1µF, unless otherwise specified.
TEST CONDITIONS
MIN
TYP
PARAMETER
MAX
UNIT
s
DAC: continued
V
ID3
V
ID2
V
ID1
0
1
0
0
0
1
0
0
1
0
0
0
0
0
0
V
ID0
0
1
0
1
0
3.1086
3.2076
3.3066
3.4056
3.5046
3.1400
3.2400
3.3400
3.4400
3.5400
3.1714
3.2724
3.3734
3.4744
3.5754
V
V
V
V
V
s
V
GATE
Out SOURCE Sat at 100mA
Out SINK Sat at 100mA
Out Rise Time
Out Fall Time
Shoot-Through Current
V
GATE
Resistance
V
GATE
Schottky
s
Soft Start (SS)
Charge Time
Pulse Period
Duty Cycle
COMP Clamp Voltage
V
FFB
SS Fault Disable
High Threshold
s
PWM Comparator
Transient Response
V
FFB
Bias Current
s
Supply Current
I
CC1
I
CC2
Operating I
CC1
Operating I
CC2
s
C
OFF
Normal Charge Time
Extension Charge Time
Discharge Current
s
Time Out Timer
Time Out Time
Fault Mode Duty Cycle
Measure V
CC2
– V
GATE
Measure V
GATE
– VPGnd;
1V < V
GATE
< 9V; V
CC1
= V
CC2
= 12V
9V > V
GATE
> 1V; V
CC1
= V
CC2
= 12V
Note 1
Resistor to LGnd
LGnd to V
GATE
@ 10mA
1.2
1.0
30
30
20
50
600
2.0
1.5
50
50
50
100
800
V
V
ns
ns
mA
kΩ
mV
(Charge Time/Pulse Period)
×
100
V
FB
= 0V; V
SS
= 0
V
GATE
= Low
1.6
25
1.0
0.50
0.9
3.3
100
3.3
0.95
1.0
2.5
5.0
200
6.0
1.10
1.1
3.0
ms
ms
%
V
V
V
V
FFB
= 0 to 5V to V
GATE
= 9V to 1V;
V
CC1
= V
CC2
= 12V
V
FFB
= 0V
100
0.3
125
ns
µA
No Switching
No Switching
V
FB
= COMP = V
FFB
V
FB
= COMP = V
FFB
8.5
1.6
8
2
13.5
3.0
13
5
mA
mA
mA
mA
V
FFB
= 1.5V; V
SS
= 5V
V
SS
= V
FFB
= 0
C
OFF
to 5V; V
FB
>1V
1.0
5.0
5.0
1.6
8.0
2.2
11.0
µs
µs
mA
V
FB
= V
COMP
; V
FFB
= 2V;
Record V
GATE
Pulse High Duration
V
FFB
= 0V
10
35
30
50
50
65
µs
%
Note 1: Guaranteed by design, not 100% tested in production.
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
