欢迎访问ic37.com |
会员登录 免费注册
发布采购

CS5151GN16 参数 Datasheet PDF下载

CS5151GN16图片预览
型号: CS5151GN16
PDF下载: 下载PDF文件 查看货源
内容描述: CPU 4位非同步降压控制器 [CPU 4-Bit Nonsynchronous Buck Controller]
分类和应用: 开关光电二极管控制器
文件页数/大小: 14 页 / 309 K
品牌: CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
 浏览型号CS5151GN16的Datasheet PDF文件第6页浏览型号CS5151GN16的Datasheet PDF文件第7页浏览型号CS5151GN16的Datasheet PDF文件第8页浏览型号CS5151GN16的Datasheet PDF文件第9页浏览型号CS5151GN16的Datasheet PDF文件第11页浏览型号CS5151GN16的Datasheet PDF文件第12页浏览型号CS5151GN16的Datasheet PDF文件第13页浏览型号CS5151GN16的Datasheet PDF文件第14页  
Applications Information: continued  
Channel 3 = V  
M1= V  
Channel 2 = Inductor Switching Node  
GATE  
Trace 3 = 12V Input (V  
Trace 4 = 5V Input (2V/div.)  
Trace 1 = Regulator Output Voltage (1V/div.)  
Trace 2 = Power Good Signal (2V/div.)  
) and V  
) (10V/div.)  
CC2  
CC1  
- 5V  
GATE  
IN  
Figure 15: CS5151 gate drive waveforms depicting rail to rail swing.  
Figure 14: CS5151 demonstration board during power up. Power Good  
signal is activated when output voltage reaches 1.70V.  
The most important aspect of MOSFET performance is  
RDSON, which effects regulator efficiency and MOSFET  
thermal management requirements.  
Selecting External Components  
The CS5151 can be used with a wide range of external  
power components to optimize the cost and performance of  
a particular design. The following information can be used  
as general guidelines to assist in their selection.  
The power dissipated by the MOSFET and the Schottky  
diode may be estimated as follows;  
Switching MOSFET:  
Power = ILOAD2 × RDSON × duty cycle  
NFET Power Transistors  
Both logic level and standard MOSFETs can be used. The  
reference designs derive gate drive from the 12V supply  
which is generally available in most computer systems and  
use logic level MOSFETs. A charge pump may be easily  
implemented to support 5V only systems. Multiple  
MOSFETs may be paralleled to reduce losses and improve  
efficiency and thermal management.  
Schottky diode:  
Power = VFORWARD × ILOAD × (1 - duty cycle)  
VOUT + VFORWARD  
Duty Cycle =  
VIN + VFORWARD - (ILOAD × RDSON OF SWITCH FET  
)
Voltage applied to the MOSFET gate depends on the appli-  
cation circuit used. The gate driver output is specified to  
drive to within 1.5V of ground when in the low state and to  
within 2V of its bias supply when in the high state. In prac-  
tice, the MOSFET gate will be driven rail to rail due to  
overshoot caused by the capacitive load it presents to the  
controller IC. For the typical application where VCC1 = VCC2  
= 12V and 5V is used as the source for the regulator output  
current, the following gate drive is provided;  
Off Time Capacitor (COFF  
The COFF timing capacitor sets the regulator off time:  
)
TOFF = COFF × 4848.5  
When the VFFB pin is less than 1V, the current charging the  
C
OFF capacitor is reduced. The extended off time can be cal-  
culated as follows:  
TOFF = COFF × 24,242.5.  
VGATE = 12V - 5V = 7V (see Figure 15).  
Off time will be determined by either the TOFF time, or the  
time out timer, whichever is longer.  
The preceding equations for duty cycle can also be used to  
calculate the regulator switching frequency and select the  
10