Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
DL5711
DL6263
Features
•
•
For general purpose applications
These diodes are also available in the DO-35 case with type
designation 1N5711 and 1N6263, in the Micro-MELF case with type
designation MCL5711 and MCL6263.
Small Signal
Schottky Diodes
MINIMELF
Maximum Ratings
Repetitive Peak Reverse
Voltage
V
R
DL5711
70V
DL6263
60V
tp<10uS,
Maximum Forward
I
FSM
2.0A
T
A
=25
O
C
Surge Current
Power Dissipation
P
TOT
400mW*
Junction Temperature
T
J
125
O
C
Storage Temperature
T
STG
-55~+150
O
C
Range
* Valid provided that electrodes are kept at ambient temperature
Cathode Mark
C
B
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
V
F
Minimum Reverse
Breakdown voltage
DL5711
DL6263
Maximum Leakage current
Maximum Junction
Capacitance
Maximum Reverse recovery
time
Maximum Thermal
resistance junction to
Ambient Air
V
R
I
R
C
J
t
rr
0.41V
1.0V
I
F
= 1.0mA
I
F
= 15mA
DIMENSION
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
70V
60V
200nA
2.0pF
1.0ns
V
R
=50V
V
R
=0, f=1MHz
I
F
=5.0mA ,
I
R
=5.0mA ,
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
R
θJA
0.3K/ W
0.030”
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