Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
DL4454
Silicon
Switching Diode
500 mW 75 Volt
Features
l
l
l
l
l
Fast Switching Speed
Low Current Leakage
Low Cost
Compression Bond Construction
Surface Mount Application
Maximum Ratings
l
Operation & Storage Temperature: -55
o
C to +150
o
C
l
Maximum Thermal Resistance: 400K/W Junction
to Ambient
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Reverse Volt.
Peak Reverse Volt.
Average Rectified Current
Power Dissipation
Junction Temperature
Peak Forward Surge Current
Maximum Instantaneous
Forward Volt.
Maximum DC Reverse
Current At Rated DC Blocking
Volt.
Typical Junction Capacitance
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
V
F
I
R
50V
75V
Resistive Load
150mA f>50Hz
500mW
175 C
500mA 8.3ms, half sine
I
FM
=10mA;
1.0V
T
J
=25
o
C
0.1uA
V
R
=50V
T
J
=25 C
Measured at
1.0MHz, V
R
=4.0V
I
F
=10mA V
R
=6V
I
R
=1mA
R
L
=100OHMS
o
o
MINIMELF
Cathode Mark
C
B
A
DIMENSION
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
C
J
2pF
SUGGESTED SOLDER
PAD LAYOUT
0.105
Reverse Recovery Time
T
rr
4nS
Pulse test: Pulse width 300 usec, Duty cycle 2%.
0.075”
0.030”
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