Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
2SC945
Features
•
•
•
•
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Pin Configuration
Bottom View
B
C
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1000uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0Adc)
Collector Cutoff Current
(V
CE
=55Vdc,R=10M OHM)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0Adc)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=6.0Vdc)
DC Current Gain
(I
C
=0.1mAdc, V
CE
=6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Voltage
(I
E
=310mAdc)
Transistor Frequency
(I
C
=10mAdc, V
CE
=6.0Vdc, f=30MHz)
O
70-140
Y
120-240
Min
50
60
5.0
0.1
0.1
0.1
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
C
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
I
EBO
B
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
70
40
0.3
1.0
1.4
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.010
D
700
G
DIMENSIONS
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
SMALL-SIGNAL CHARACTERISTICS
f
T
150
GR
200-400
MHz
BL
350-700
CLASSIFICATION OF H
FE (1)
Rank
Range
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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