FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4151
1N4151
SMALL SIGNAL SWITCHING DIODE
MECHANICAL DATA
.
Case:
DO-35 glass case
.
Polarity:
Color brand denotes cathode end
.
Weight:
Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbol
Reverse voltage
Peak reverse voltage
Average rectified current, Half wave rectification with
Resistive load at T
A
=25
and F 50Hz
I
FSM
Ptot
T
J
V
R
V
RM
I
AV
Value
50
75
150
1)
Units
Volts
Volts
mA
Surge forward current at t<1S and T
J
=25
Power dissipation at T
A
=25
Junction temperature
Storage temperature range
500
500
1)
175
-65 to + 175
Ma
Mw
T
STG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbols
Forward voltage
Leakage current
at V
R
=50V
V
F
I
R
Min.
Typ.
Max.
1
50
Units
Volts
nA
at V
R
=20V, T
J
=150
Junction capacitance at V
R
=V
F
=0V
Reverse breakdown voltage tested with 5 A pulse
Reverse recovery time from I
F
=10mA to I
R
=10mA to I
R
=1mA,
from I
F
=10mA to I
R
=1mA to I
R
=1mA, V
R
=6V.R
L
=100
Thermal resistance junction to ambient
Rectification efficience at f=100MHz,V
RF
=2V
R
I
R
C
J
V
(BR)R
t
rr
t
rr
JA
50
75
2
A
pF
4
4.000
350
1)
0.45
ns
ns
K/W
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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