RATING CHARACTERISTIC CURVES ( CH3906SPT )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= - 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= -1V; note 1
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10 mA
I
C
= - 50 mA
I
C
= -100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
NF
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= -10 mA; I
B
= - 1 mA
I
C
= -50 mA; I
B
= - 5 mA
I
C
= -10 mA; I
B
= -1mA
I
C
= -50 mA; I
B
= - 5 mA
I
E
= i
e
= 0; V
CB
= - 5 V ; f = 1 MHz
I
C
= i
c
= 0; V
EB
= -500 mV;
f = 1 MHz
I
C
= 10 mA; V
CE
= - 2 0 V ;
f = 100 MHz
60
80
100
60
30
−
−
-650
−
−
−
250
−
−
300
−
−
-250
-400
-850
-950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
−
−
MIN.
MAX.
-50
-50
UNIT
nA
nA
I
C
= 100
µA;
V
CE
= - 5 V; R
S
= 1 k
Ω
;
−
f = 10 Hz to 15.7 kHz
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= -10 mA; I
Bon
= -1 mA;
I
Boff
= 1 mA
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
