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2SB1386PPGP 参数 Datasheet PDF下载

2SB1386PPGP图片预览
型号: 2SB1386PPGP
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor,]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 367 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号2SB1386PPGP的Datasheet PDF文件第1页浏览型号2SB1386PPGP的Datasheet PDF文件第3页  
RATING CHARACTERISTIC CURVES ( 2SB1386PPT )  
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
PARAMETERS  
CONDITION  
IC=-50uA  
SYMBOL  
MIN.  
TYPE  
-
MAX.  
-
UNITS  
Collector-Base breakdown voltage  
BVCBO  
-30  
Volts  
BVCEO  
BVEBO  
-
-
-
-
Volts  
Volts  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
IC=-1mA  
IE=-50uA  
-20  
-6  
-
Collector Cut-off Current  
Emitter Cut-off Current  
IE=0; VCB=-20V  
IC=0; VEB=-5V  
ICBO  
-
-
-0.5  
-0.5  
uA  
uA  
IEBO  
-
VCE=-2V; Note 1  
IC=-0.5A  
82  
-
390  
DC Current Gain  
hFE  
Collector-Emitter Saturation Voltage  
Output Capacitance  
IC=-4A; IB=-0.1A  
VCEsat  
CC  
-
-
-
-0.35  
60  
-1.0  
Volts  
pF  
IE=ie=0; VCB=-20V;  
f=1MHz  
-
-
IE=-0.05A; VCE=-6.0V;  
f=100MHz  
Transition Frequency  
fT  
120  
MHz  
Note :  
1. hFE(2) Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390.