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2SB1182PT 参数 Datasheet PDF下载

2SB1182PT图片预览
型号: 2SB1182PT
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管外延 [PNP Epitaxial Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 80 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号2SB1182PT的Datasheet PDF文件第1页浏览型号2SB1182PT的Datasheet PDF文件第3页  
RATING CHARACTERISTIC CURVES ( 2SB1182PT )
CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector Cut-off Current
Emitter Cut-off Current
CONDITION
I
E
=0; V
CB
=-20V
I
C
=0; V
EB
=-4V
V
CE
=-3V; Note 1
I
C
=-0.5A
SYMBOL
I
CBO
I
EBO
MIN.
-
-
TYPE
-
-
MAX.
-1.0
-1.0
UNITS
uA
uA
o
DC Current Gain
h
FE
82
-
390
Collector-Emitter Saturation
Voltage
Base-Emitter Saturatio
Voltage
Collector Capacitance
Transition Frequency
I
C
=-2A; I
B
=-0.2A
I
C
=-2A; I
B
=-0.2A
I
E
=ie=0; V
CB
=-10V;
f=1MHz
I
C
=-0.1A; V
CE
=-5.0V;
f=100MHz
V
CEsat
V
BEsat
C
C
f
T
-
-
-
-
-0.3
-1.0
55
100
-0.5
-1.5
-
-
Volts
Volts
pF
MHz
Note :
1. Pulse test: tp
300uSec;
δ ≤
0.02.