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2SB1132RGP 参数 Datasheet PDF下载

2SB1132RGP图片预览
型号: 2SB1132RGP
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor,]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 284 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号2SB1132RGP的Datasheet PDF文件第1页浏览型号2SB1132RGP的Datasheet PDF文件第2页  
RATING CHARACTERISTIC CURVES ( 2SB1132PT )
fig1.DCcurrent gain VS. collector
current (1)
1000
Ta=25 C
h
FE
-DC CURRENT GAIN
O
fig2.Collector-emitter saturation voltage
VS. collector current
-1
-0.5
Ta=25 C
I
C
/I
B
=10
O
h
FE
-DC CURRENT GAIN
500
V
CE
=-3V
-1V
200
-0.2
-0.1
-0.05
-0.02
-0.01
-1 -2 -5
-50 -100 -200 -500 -1000 -2000
100
50
-1 -2
-5 -10
-20
-50
-100
-200 -500 -1000
I
C
- COLLECTO CURRENT (mA)
-10
-20
I
C
- COLL ECTOR CURRENT (mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
fig3.Gain bandwidth product VS.
emitter current
TRANSITION FREQUENCY : fT (MHZ)
Ta=25 C
V
CE
=-5V
O
fig4.Collector output capacitance VS.
collector-base voltage
100
Ta=25 C
f=1MHZ
I
E
=0A
O
200
100
50
50
20
20
-1 -2
-5
-10
-20
-50
-100
EMITTER CURRENT : IE (mA)
10
-0.5
-1
-2
-5
-10
-20
COLLECTOR TO BASE VOLTAGE : VCB (V)
fig5.Grounded emitter output
characteristics
COLLECTOR CURRENT : Ic (mA)
fig6.Grounded emitter propagation
characteristics
-2.0
-1.5
-1.0
COLLECTOR CURRENT : Ic (mA)
-500
-200
-100
-50
-20
-10
-5
-2
-1
0
-0.6 -0.8
-3.5
-4.0
-400
-4.5
-5.0
-300
-200
-500
-3.0
-2.5
-0.5
-100
0
I
B
=0mA
0
-0.4
-0.8
-1.2
-1.6
Ta=25 C
-2.0
O
-0.2 -0.4
-1.0
-1.2
-1.4
-1.6
COLLECTOR-EMITTERVOLTAGE : V
CE
(V)
COLLECTOR-EMITTERVOLTAGE : V
CE
(V)