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2SB1132PGP 参数 Datasheet PDF下载

2SB1132PGP图片预览
型号: 2SB1132PGP
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor,]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 284 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号2SB1132PGP的Datasheet PDF文件第1页浏览型号2SB1132PGP的Datasheet PDF文件第3页  
RATING CHARACTERISTIC ( 2SB1132PT)  
THERMAL CHARACTERISTICS  
CHARACTERISTICS  
T
amb = 25 °C unless otherwise speciÞed.  
SYMBOL PARAMETER  
emitter cutoff current  
CONDITIONS  
UNIT  
MIN. Typ. MAX.  
uA  
uA  
EBO  
VEB=-4V  
VCB=-20V  
-0.5  
-0.5  
I
-40  
ICBO  
collector cut-off current  
collector-base breakdown voltage  
=-50uA  
IC  
IC =-1mA  
=-50uA  
BVCBO  
BVCEO  
V
V
collector-emitter breakdown voltage  
emitter-base breakdown voltage  
-32  
BVEBO  
IE  
-5  
V
FE  
82  
390  
DC  
h
current transfer ratio  
VCE=-3V , IC=-0.1A  
IC/IB=-500mA/-50mA  
collector-emitter saturation  
mV  
VCEsat  
Cob  
-200  
-500  
v
oltage  
I
z
pF  
collector output capacitance  
transition frequency  
=-10V  
20  
30  
E = 0; VCB  
; f = 1 MH  
5
f = 30MHz  
IE = 0 mA; V  
V;  
150  
CE= - 5  
MHz  
fT  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390