RATING CHARACTERISTIC CURVES ( 2N7002TPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 60 V, V
GS
= 0 V
T
C
=125°C
V
GS
= 15 V, V
DS
= 0 V
V
GS
= -15 V, V
DS
= 0 V
60
70
1
0.5
10
-10
V
µA
mA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
V
GS(th)
R
DS(ON)
V
DS(ON)
I
D(ON)
g
FS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 4.0 V, I
D
= 100 mA
1
2.0
1.7
2.5
0.6
0.09
2.5
3.0
4.0
3.75
1.5
V
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 250 mA
Drain-Source On-Voltage
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
On-State Drain Current
V
GS
= 10 V, V
DS
= 7.5V
DS(on)
V
GS
= 4.5V, V
DS
= 10V
DS(on)
Forward Transconductance
V
DS
= 15 V
DS(on)
, I
D
= 200 m A
800
500
Ω
V
1800
700
250
mA
mS
DYNAMIC CHARACTERISTICS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
= 30 V, V
GS
= 10 V,
I
D
= 250 mA
0.6
0.06
0.06
1.0
25
5
50
25
5
20
nC
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
25
6
1.2
pF
V
DD
= 30 V, R
L
= 200
Ω
,
I
D
= 100 mA, V
GS
= 10 V,
R
GEN
= 10
Ω
V
DD
= 30 V, R
L
= 200
Ω
,
I
D
= 100 mA, V
GS
= 10 V,
R
GEN
= 10
Ω
7.5
6
7.5
3
nS
Turn-Off Time
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 200 mA
(Note 1)
0.85
115
0.8
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
