ELECTRICAL CHARACTERISTIC ( 2N7002SGP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
=125°C
V
GS
= 15 V, V
DS
= 0 V
V
GS
= -15 V, V
DS
= 0 V
60
1
0.5
100
-100
V
µA
mA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 4)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 500 mA
T
C
=25°C
T
C
=125°C
T
C
=25°C
T
C
=125°C
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 5 V, I
D
= 50 mA
V
GS
= 5 V, I
D
= 50 mA
1.0
2.0
7.5
13.5
7.5
13.5
3.75
0.375
V
R
DS(ON)
Static Drain-Source On-Resistance
Ω
V
DS(ON)
I
D(ON)
g
FS
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
V
GS
= 10V, V
DS
= 2.0 V
DS(on)
V
DS
= 2.0 V
DS(on)
, I
D
= 200 m A
500
80
V
mA
mS
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
(Note 4)
(Note 4)
50
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
V
DD
= 25 V, R
L
= 50
Ω
,
I
D
= 500 mA , V
gen
= 10 V,
R
GEN
= 25
Ω
25
5
20
nS
40
pF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 115 mA
115
0.8
1.5
mA
A
V
Note:
4. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
