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2N7002ESPT 参数 Datasheet PDF下载

2N7002ESPT图片预览
型号: 2N7002ESPT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 515 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
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RATING CHARACTERISTIC CURVES ( 2N7002ESPT )
Typical Electrical Characteristics
(continued)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
2
1
Figure 7. Gate-Source Threshold Voltage
with Temperature
3.5
I
D
=1mA, V
DS
=V
GS
THRESHOLD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
min.
1.0
0.5
0
-50
typ.
V
GS
= 0 V
V
GS(th)
, GATE-SOURCE
0 .5
TJ = 1 5 0 ° C
0 .1
0 .0 5
25°C
0 .0 1
0 .0 0 5
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1
0 .2
0 .4
V
SD
0 .6
0 .8
1
1 .2
1 .4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Capacitance Characteristics
g
fs
, FORWARD TRANSCONDUCTANCE (S)
60
40
20
10
5
.25
Figure 10. Forward Transconductance
T
J
= 2 5
O
C
.20
CAPACITANCE (pF)
C iss
.15
C oss
.10
T
J
= 1 5 0
O
C
2
1
f = 1 MH z
V
GS
= 0V
1
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
.05
C rss
50
0
0
0 .1
0 .2
0 .3
I
D
, DRAIN CURRENT (A)
0 .4
0.5
Figure 11.
Figure 12. Switching Waveforms
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
10%
50%
50%
S
Pulse Width