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2N7002DSPT 参数 Datasheet PDF下载

2N7002DSPT图片预览
型号: 2N7002DSPT
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强MOS FET [Dual N-Channel Enhancement MOS FET]
分类和应用:
文件页数/大小: 5 页 / 230 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
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RATING CHARACTERISTIC CURVES ( 2N7002DSPT )
Typical Electrical Characteristics
(continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.16
I
D
= 250µ A
I
S
, REVERSE DRAIN CURRENT (A)
1.5
1
0.5
V
GS
= 0V
1.12
1.08
1.04
1
0.96
0.92
0.88
-50
BV
DSS
, NORMALIZED
TJ = 125°C
0.1
25°C
-55°C
0.01
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
100
50
10
V
V
GS
, GATE-SOURCE VOLTAGE (V)
8
DS
= 25V
I
D
= 0.51A
CAPACITANCE (pF)
C iss
20
10
5
6
C oss
C rss
f = 1 MHz
4
2
2
1
0.1
V
GS
= 0 V
0.2
0.5
1
2
5
10
20
50
0
0
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
Q
g
, GATE CHARGE (nC)
1
1.2
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
0.7
V
DS
= 10V
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.3
V
GS
TJ = -55°C
25°C
I
D
, DRAIN CURRENT (A)
125°C
0.6
0.9
1.2
, GATE TO SOURCE VOLTAGE (V)
1.5
Figure 11. Transconductance Variation with Drain
Current and Temperature.