Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
400
1.2
1.1
1.0
0.9
0.8
–60
TK
VZ
=10 x 10
–4
/K
300
l
l
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
0
–2 x 10
–4
/K
–4 x 10
–4
/K
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
0
60
120
180
240
95 961
1
95 9599
T
j
– Junction Temperature (°C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
15
10
5
I
Z
=5mA
200
100
0
0
–5
0
10
20
30
40
0
40
80
120
160
200
50
95 9602
T
amb
– Ambient T
emperature(°C )
95 9600
V
Z
– Z-Voltage ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
200
V
Z
–VoltageChange mV )
(
T
j
=25°C
100
150
V
R
=2V
T
j
=25°C
100
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 6 Diode Capacitance vs. Z-Voltage
CHENG-YI [ CHENG-YI ELECTRONIC CO., LTD. ]
