CED6355/CEU6355
25
20
15
10
35
28
21
-VGS=10,8,6,4V
14
-VGS=3V
25 C
7
5
0
TJ=125 C
-55 C
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3000
2500
2000
1500
1000
500
ID=-26A
VGS=-10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
5
10
15
20
25
30
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
103
102
V
GS=0V
VDS=VGS
ID=-250µA
101
100
-50 -25
0
25 50 75 100 125 150
0.3
0.6
0.9
1.2
1.5
1.8
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3