CED6060R/CEU6060R
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pulse Drain-Source
Avalanche Energy
V
R
DD 25V,
=
=
L
25µH
mJ
A
E
AS
200
30
=
G
25Ω
6
Maximum Drain-Source
Avalanche Current
I
AS
OFF CHARACTERISTICS
V
GS 0V, I
D
250µA
Drain-Source Breakdown Voltage
=
60
V
BVDSS
=
µA
nA
I
DSS
GSS
V
DS 60V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
25
=
=
VGS
20V, VDS = 0V
I
Ć
=
100
Ć
ON CHARACTERISTICSa
VGS(th)
2
4
V
Gate Threshold Voltage
V
DS =VGS, I
D
= 250µA
RDS(ON)
mΩ
Drain-Source On-State Resistance
25
V
GS = 10V, I = 24A
D
V
GS = 10V, VDS = 10V
On-State Drain Current
I
D(ON)
A
S
60
gFS
20
Forward Transconductance
VDS = 10V, I
D
= 24A
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
t
D(ON)
20
ns
ns
15
250
45
V
DD = 30V,
= 30A,
I
V
D
Rise Time
t
r
300
GS = 10V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
ns
ns
nC
60
150
43
R
GEN= 7.5Ω
t
f
130
36
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =48V, I
D
= 30A,
Q
gs
gd
9
nC
nC
VGS =10V
19
Q
6-43
CET [ CHINO-EXCEL TECHNOLOGY ]
