CED4531/CEU4531
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -25A, RDS(ON) = 36mΩ @VGS = -10V.
RDS(ON) = 57mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
-30
Gate-Source Voltage
±20
-25
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
-75
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
43
W
PD
0.29
-55 to 175
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
3.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
2005.March
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
