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CEU4531 参数 Datasheet PDF下载

CEU4531图片预览
型号: CEU4531
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 106 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CED4531/CEU4531  
P-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
-30V, -25A, RDS(ON) = 36m@VGS = -10V.  
RDS(ON) = 57m@VGS = -4.5V.  
Super high dense cell design for extremely low RDS(ON)  
.
High power and current handing capability.  
Lead free product is acquired.  
D
TO-251 & TO-252 package.  
G
D
G
S
CEU SERIES  
TO-252(D-PAK)  
CED SERIES  
TO-251(I-PAK)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
V
Drain-Source Voltage  
-30  
Gate-Source Voltage  
±20  
-25  
V
Drain Current-Continuous  
A
Drain Current-Pulsed a  
IDM  
-75  
A
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
43  
W
PD  
0.29  
-55 to 175  
W/ C  
C
Operating and Store Temperature Range  
TJ,Tstg  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
3.5  
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RθJA  
50  
2005.March  
http://www.cetsemi.com  
1