CES2313
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.6A, RDS(ON) = 60mΩ @VGS = -10V.
RDS(ON) = 90mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON)
.
Rugged and reliable.
D
Lead free product is acquired.
SOT-23 package.
G
D
S
G
S
SOT-23
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
-30
±20
-3.6
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
-14.4
Maximum Power Dissipation
PD
1.25
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
100
C/W
Rev 2. 2010.May
Specification and data are subject to change without notice .
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
