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CES2313 参数 Datasheet PDF下载

CES2313图片预览
型号: CES2313
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 388 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CES2313  
P-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
-30V, -3.6A, RDS(ON) = 60m@VGS = -10V.  
RDS(ON) = 90m@VGS = -4.5V.  
High dense cell design for extremely low RDS(ON)  
.
Rugged and reliable.  
D
Lead free product is acquired.  
SOT-23 package.  
G
D
S
G
S
SOT-23  
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
Drain-Source Voltage  
-30  
±20  
-3.6  
V
V
A
A
Gate-Source Voltage  
Drain Current-Continuous  
Drain Current-Pulsed a  
IDM  
-14.4  
Maximum Power Dissipation  
PD  
1.25  
W
C
Operating and Store Temperature Range  
TJ,Tstg  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Limit  
Units  
Thermal Resistance, Junction-to-Ambient b  
RθJA  
100  
C/W  
Rev 2. 2010.May  
Specification and data are subject to change without notice .  
http://www.cetsemi.com  
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