CEP21A2/CEB21A2
15
30
25
20
15
10
5
VGS=4.5,3.5,3.0V
25 C
VGS=2.5
12
9
VGS=2.0
VGS=1.5
6
3
-55 C
2.0
TJ=125 C
1.0
0
0
0.5
0
1
2
3
4
1.5
2.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=8A
VGS=4.5V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
102
101
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 68