CEP02N6/CEB02N6
CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
600V
600V
600V
600V
RDS(ON)
5Ω
ID
@VGS
10V
CEP02N6
CEB02N6
CEI02N6
CEF02N6
2A
2A
2A
2A e
5Ω
10V
5Ω
10V
5Ω
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
S
CEB SERIES
TO-263(DD-PAK)
CEI SERIES
TO-262(I2-PAK)
CEF SERIES
TO-220F
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263/262 TO-220F
600
Drain-Source Voltage
VDS
VGS
ID
V
V
Gate-Source Voltage
±30
2
6
2 e
6 e
Drain Current-Continuous
Drain Current-Pulsed a
A
f
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Operating and Store Temperature Range
60
0.48
125
2
29
W
PD
0.23
125
2
W/ C
mJ
A
EAS
IAR
EAR
5.4
5.4
mJ
C
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
4.3
65
RθJA
62.5
2002.September
http://www.cetsemi.com
4 - 2
CET [ CHINO-EXCEL TECHNOLOGY ]
