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CEP02N6_02 参数 Datasheet PDF下载

CEP02N6_02图片预览
型号: CEP02N6_02
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 133 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEP02N6_02的Datasheet PDF文件第2页浏览型号CEP02N6_02的Datasheet PDF文件第3页浏览型号CEP02N6_02的Datasheet PDF文件第4页  
CEP02N6/CEB02N6  
CEI02N6/CEF02N6  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
Type  
VDSS  
600V  
600V  
600V  
600V  
RDS(ON)  
5  
ID  
@VGS  
10V  
CEP02N6  
CEB02N6  
CEI02N6  
CEF02N6  
2A  
2A  
2A  
2A e  
5Ω  
10V  
5Ω  
10V  
5Ω  
10V  
D
Super high dense cell design for extremely low RDS(ON)  
High power and current handing capability.  
Lead free product is acquired.  
.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.  
G
S
CEB SERIES  
TO-263(DD-PAK)  
CEI SERIES  
TO-262(I2-PAK)  
CEF SERIES  
TO-220F  
CEP SERIES  
TO-220  
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Limit  
Parameter  
Symbol  
Units  
TO-220/263/262 TO-220F  
600  
Drain-Source Voltage  
VDS  
VGS  
ID  
V
V
Gate-Source Voltage  
±30  
2
6
2 e  
6 e  
Drain Current-Continuous  
Drain Current-Pulsed a  
A
f
IDM  
A
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
Single Pulsed Avalanche Energy d  
Repetitive Avalanche Current a  
Repetitive Avalanche Energy a  
Operating and Store Temperature Range  
60  
0.48  
125  
2
29  
W
PD  
0.23  
125  
2
W/ C  
mJ  
A
EAS  
IAR  
EAR  
5.4  
5.4  
mJ  
C
TJ,Tstg  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
2.1  
4.3  
65  
RθJA  
62.5  
2002.September  
http://www.cetsemi.com  
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