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CEM3258 参数 Datasheet PDF下载

CEM3258图片预览
型号: CEM3258
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 302 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM3258  
Dual N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
5
30V, 7A, RDS(ON) = 28m@VGS = 10V.  
RDS(ON) = 40m@VGS = 4.5V.  
Super high dense cell design for extremely low RDS(ON)  
.
High power and current handing capability.  
Lead free product is acquired.  
Surface mount Package.  
D1  
8
D1  
7
D2  
6
D2  
5
SO-8  
1
2
3
4
1
S1  
G1  
S2  
G2  
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
Drain-Source Voltage  
30  
±20  
7
V
V
A
A
Gate-Source Voltage  
Drain Current-Continuous  
Drain Current-Pulsed a  
IDM  
28  
Maximum Power Dissipation  
PD  
2.0  
W
C
Operating and Store Temperature Range  
TJ,Tstg  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Limit  
Units  
Thermal Resistance, Junction-to-Ambient b  
RθJA  
62.5  
C/W  
Rev 1. 2005.Dec  
http://www.cetsemi.com  
Details are subject to change without notice .  
1