CEM3258
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
5
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1
8
D1
7
D2
6
D2
5
SO-8
1
2
3
4
1
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
30
±20
7
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
28
Maximum Power Dissipation
PD
2.0
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
Rev 1. 2005.Dec
http://www.cetsemi.com
Details are subject to change without notice .
1
CET [ CHINO-EXCEL TECHNOLOGY ]
