CED16N10L/CEU16N10L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.5A
VGS = 5V, ID = 5A
1
3
V
95
100
5
115
125
mΩ
On-Resistance
mΩ
S
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 10V, ID = 6.5A
Ciss
Coss
Crss
630
105
26
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
11
2.7
73
22
6
ns
ns
VDD = 50V, ID = 13.3A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
150
15
25
ns
Turn-Off Fall Time
7.5
17
ns
Total Gate Charge
Qg
nC
nC
nC
V
V
= 80V, I = 13.3A,
D
= 10V
DS
GS
Gate-Source Charge
Qgs
Qgd
2.2
3.5
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
13.3
1.5
A
V
VSD
VGS = 0V, IS = 13.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d. L=0.5mH, I =13.3A, VDD=25V, R =25Ω, Starting T =25 C
AS
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
