CED12P10/CEU12P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -9A, RDS(ON) = 315mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
-100
±30
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
Drain Current-Continuous
-9
A
Drain Current-Pulsed a
IDM
-36
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
50
W
PD
0.4
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
2005.August
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
