CEP75A3/CEB75A3
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 25V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
25
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 29A
1
3
9
V
7
mΩ
mΩ
Static Drain-Source
On-Resistance
10
13
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
VDS = 10V, ID = 15A
12
1190
280
155
S
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
13
5
26
10
66
14
13
ns
ns
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
33
7
ns
ns
Total Gate Charge
Qg
9.8
3.4
2.7
nC
nC
nC
VDS = 15V, ID = 20A,
VGS = 5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
69
A
V
VSD
VGS = 0V, IS = 20A
0.85
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testin
2